Historically, silicon-based power semiconductors have served as the backbone of power systems, but wide bandgap (WBG) devices are changing this. As the market for these devices grow, it is important to understand what drives the commercial market to use WBG devices versus the more established Silicon technologies. WBG materials deliver results that aren’t possible with silicon in the areas of Power and RF. These improvements can have a significant impact in reducing overall electricity consumption worldwide, and in particular, SiC is enabling electric vehicles with longer range and lower cost. This adoption is driving a very rapid expansion for the SiC market and supply chain.
Dr. John Palmour is the CTO for Wolfspeed, a Cree company. He directs and conducts the Power, Microwave, and materials development for Cree. He was one of the co-founders of Cree in 1987. He has been a leader in SiC and GaN device development for the last 32 years, demonstrating numerous firsts in these technologies. John is responsible for 380 publications and 75 U.S. patents in the areas of processing and device designs for SiC and GaN electronic devices. Dr. Palmour received his B.S. and Ph.D. degrees from NC State University and became a Fellow of the IEEE in 2013.