GaN and SiC Power devices are now commercially available, the next generation will be more complex structures and for wide scale adoption both technical challenges must be overcome and costs reduced. By focussed development and leveraging over 37 years of CS technology knowledge Oxford Instruments Plasma Technology has produced advanced remote Plasma Enhanced Atomic Layer Deposition (PE ALD) and Plasma Etch solutions that give superior device performance and cost down per wafer. Remote PE ALD is used to create dense high k films for gate dielectrics and passivation. While Atomic Layer Etching (ALE) introduces a new paradigm in etch depth accuracy, essential for recessed GaN HEMTs. Working closely with our customers we ensure they have the tools to get the most out of their devices.
Dr Mark Dineen graduated from Cardiff University with a PhD on ‘Plasma etching of Gallium Nitride’ and joined Oxford Instruments in 2000. Firstly as a Process Engineer working on etching of III-V materials, then moving into Product Management and more recently marketing Mark has a wealth of experience related to Compound Semiconductor plasma process solutions.