It is well known that dislocation density and type influence reliability and performance of a GaN HEMT. Moreover, control of the dopant concentration and dopant activation are crucial for reliable manufacture of high performance GaN HEMTs. We will present a non-destructive, Fab ready and in-line capable solution for monitoring the above-mentioned parameters.
Samuel has headed Attolight since its creation in 2008 and helped to transform Attolight’s quantitative cathodoluminescence from manual lab and FA tools into full wafer fab ready tool. Samuel holds an MS of Physics from EPFL and holds a PhD in physics from the same university.