In this talk I will discuss our work on Template-Assisted Selective Epitaxy (TASE) for the monolithic integration of photonic devices on silicon. We use an oxide template within which, select features of the silicon is replaced locally by active III-V material grown by metal-organic chemical vapor deposition (MOCVD). The geometry of the III-V features are determined by the shape of the cavity and not by carefully tuning growth conditions, and they are self-aligned to existing silicon features. The versatility of this technique will be demonstrated through several experimentally demonstrated devices. In-plane monolithic InGaAs photodetectors operating at above 25 GHz and with maxima in the O- and C-band, hybrid InGaAs/Si photonic crystal 1D nanobeam lasers emitting over the entire telecom spectrum.
Kirsten Emilie Moselund received the M.Sc. degree in engineering from the Technical University of Denmark (DTU) in 2003 and the Ph.D. degree in microelectronics from the Swiss Federal Institute of Technology in Lausanne (EPFL), Lausanne, Switzerland, in 2008. In 2008, she joined the IBM Zurich – Research, where she is currently managing the Materials Integration and Nanoscale Devices group, which among other things focuses on the development of III-V on silicon monolithic integration for novel photonic and electronic device concepts. Her research interests include nanofabrication technology, semiconductor physics, nanophotonics and novel electronic and photonic device concepts. She is the co-author of more than 100 scientific publications and holds an ERC grant on the development of nanophotonic light sources.