Vacuum tubes still play a leading role in high power Radio Frequency (RF) applications because solid-state RF devices, even those based on 28V-50V Gallium Nitride (GaN) technology, require the combining of hundred to thousands of modules to achieve mega-watt class RF power. This landscape is finally changing. Meet Integra’s High Voltage RF GaN HEMTs operating at 100V-150V capable of multi-kW smaller units to reduce power combining by 4x. That translate into the combining of 25x GaN FET to achieve 100 kW power versus 100x 1kW units.
Dr. Gabriele Formicone received the Laurea in Physics from the University of Rome “La Sapienza” (Italy), M.S. and Ph.D. in Electrical Engineering from Arizona State University in Tempe, AZ, USA. He has 24 years of industry experience in the design and characterization of RF/Microwave power transistors. His expertise covers Silicon Bipolar, Vertical and Lateral DMOS transistors and GaN/AlGaN HEMT RF power technologies, spanning from TCAD simulations for transistor design and process optimization, to transistor layout and RF power amplifier design and characterization. Dr. Formicone is IEEE Senior Member and (part-time) faculty associate at Arizona State University in the Department of Electrical Engineering.