Mature III-Nitride devices just use ternary alloy of AlGaN and InGaN. This limits the physical properties like the polarization needed for high electron mobility transistors. Hence, new material combinations like AlScN are under active research. However, Sc lacks a suitable source for metal-organic vapor phase epitaxy, and the alternative AlInN is prone to unintentionally Ga incorporation and has a very small growth window. Thus, we introduce the new alloy AlPyN1-y: There are good P-sources and AlP growth conditions are more similar to AlN. First experiments showed that AlPN barrier layers in HEMT structures have low resistance.
Markus Pristovsek has devoted his career to the understanding of semiconductor growth in metal-organic vapor phase epitaxy (MOVPE) of compound semiconductors. He earned his PhD at the Technical University of Berlin (German) in 2000, and then went for a Postdoc at the National Institute for Materials Science (Japan). From 2003 he was Assistant at The Technical University Berlin, where he realized the only in-situ Scanning Tunneling Microscope for MOVPE. From 2012 he was Senior Researcher at the University of Cambridge (UK), before becoming a Dedicated Professor at the Center of Research on Future Electronic at Nagoya University in 2017.