Power electronics is a fast growing market because of continuing electrification of the world's population and new applications in electric vehicles, rail, wind, and smart grid technology. Although GaN-on-Si is making inroads against Si power MOSFETs and silicon carbide (SiC) is already supplanting Si-based IGBTs, vertical gallium nitride on gallium nitride (GaN-on-GaN) devices have substantial advantages in terms of efficiency, size of the device as well as peripheral passives, faster switching speeds, and cost even at today's prices. Kyma's HVPE PureGaN technology, including thick (10-100um), large area (up to 200mm) growth for drift regions with controllable n-type carrier concentration (2e15 - 1e17 cm-3) enables the device performance needed for volume adoption of GaN power electronics.
Dr. Heather Splawn is the President & CEO of Kyma Technologies and has been with the company for over 11 years. She leads Kyma’s strategic vision and overall direction while directing daily operations, including management of government and commercial contracts and partnerships as well as an international sales network. Heather co-founded The DoughMan, a gastro-athletic event benefiting local charities in Durham, North Carolina, obtained intern experience at Intel, and received her PhD in Electrical Engineering from Duke University.