The advanced properties of Gallium Nitride (GaN) are perfect for new circuit topologies and allow engineers to develop products, like chargers and adapters, that deliver higher system efficiency, simplified thermal management, and increased durability and reliability. Drawing on his deep expertise across the full range of power technologies, Filippo Di Giovanni from STMicroelectronics will explain how GaN’s electrical properties can provide the substantial benefit to particular design problems.
Filippo Di Giovanni is currently Strategic Marketing, Innovation and Key Programs Manager within the Power Transistor MACRO Division at ST, based in Catania, Italy. As Technical Marketing Manager, he helped to introduce the first strip-based MOSFETs, and at the end of the nineties, he coordinated the development of “Super-junction” high-voltage MOSFETs (MDmeshTM), a real breakthrough in silicon power semiconductors. In 2012, he was placed in charge of the development of the first 1,200V silicon carbide (SiC) MOSFETs, which have enabled ST to become today undisputable market leader and one of the main suppliers in various fields of applications, including the growing EV (electrical vehicle) market.Dr. Di Giovanni’s experience also includes working on gallium nitride on silicon (GaN-on-Si) HEMT for both power conversion and RF domains. Regularly invited to participate in various conferences and workshops dedicated to power conversion, he also coordinates European projects and is a key member of an ST workgroup handling the collaborative development of GaN-on-Si with ST’s important industry partners.